QJD1210011
Powerex Inc.
Powerex Inc.
MOSFET 2N-CH 1200V 100A SIC
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The QJD1210011 by Powerex Inc. is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the QJD1210011 provides reliable operation under stringent conditions. Powerex Inc.'s innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V
- Power - Max: 900W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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