QSH29TR
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 1.25W TSMT6
$0.91
Available to order
Reference Price (USD)
3,000+
$0.29000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with Rohm Semiconductor's QSH29TR, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The QSH29TR is widely used in lighting systems, portable electronics, and automotive accessories. Rohm Semiconductor's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the QSH29TR is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 70V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: -
- Power - Max: 1.25W
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
Related Products
Nexperia USA Inc.
PUMD13,115
Toshiba Semiconductor and Storage
RN2710JE(TE85L,F)
Nexperia USA Inc.
PUMB4,115
Toshiba Semiconductor and Storage
RN1909FE(TE85L,F)
onsemi
SMUN5330DW1T1G
Toshiba Semiconductor and Storage
RN2701,LF
onsemi
NSVTB60BDW1T1G
onsemi
EMD5DXV6T5G
onsemi
MUN5133DW1T1G
Nexperia USA Inc.