R1EV58064BDANBI#B2
Renesas Electronics America Inc
Renesas Electronics America Inc
IC EEPROM 64KB C-MOS 28DIP
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The R1EV58064BDANBI#B2 from Renesas Electronics America Inc is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the R1EV58064BDANBI#B2 ensures longevity and consistent performance in various environments.
Memory ICs like the R1EV58064BDANBI#B2 are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the R1EV58064BDANBI#B2 delivers unmatched reliability and efficiency.
The R1EV58064BDANBI#B2 is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 100 ns
- Voltage - Supply: 2.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-DIP
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