R1LV0216BSB-5SI#S1
Renesas Electronics America Inc

Renesas Electronics America Inc
IC SRAM 2MBIT PARALLEL 44TSOP II
$8.87
Available to order
Reference Price (USD)
1+
$8.87000
500+
$8.7813
1000+
$8.6926
1500+
$8.6039
2000+
$8.5152
2500+
$8.4265
Exquisite packaging
Discount
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The R1LV0216BSB-5SI#S1 by Renesas Electronics America Inc is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the R1LV0216BSB-5SI#S1 are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The R1LV0216BSB-5SI#S1 stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The R1LV0216BSB-5SI#S1 finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the R1LV0216BSB-5SI#S1 a preferred Memory IC for diverse uses.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II