R1RW0408DGE-2LR#B0
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 36SOJ
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Discover the R1RW0408DGE-2LR#B0 Memory IC by Renesas Electronics America Inc, a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The R1RW0408DGE-2LR#B0 is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the R1RW0408DGE-2LR#B0, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The R1RW0408DGE-2LR#B0 stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the R1RW0408DGE-2LR#B0 span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The R1RW0408DGE-2LR#B0 is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ
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