R1RW0408DGE-2LR#B1
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 36SOJ
$16.03
Available to order
Reference Price (USD)
1+
$16.03200
500+
$15.87168
1000+
$15.71136
1500+
$15.55104
2000+
$15.39072
2500+
$15.2304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R1RW0408DGE-2LR#B1 Memory IC by Renesas Electronics America Inc is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the R1RW0408DGE-2LR#B1, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The R1RW0408DGE-2LR#B1 features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the R1RW0408DGE-2LR#B1 include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The R1RW0408DGE-2LR#B1 is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ
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