R1RW0416DGE-2PR#B0
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 44SOJ
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The R1RW0416DGE-2PR#B0 by Renesas Electronics America Inc is a premium Memory IC designed to enhance the performance of your electronic systems. As part of the Memory category, this IC provides efficient data storage and retrieval, making it indispensable for modern technology. Its compact design and high-speed operation make it a preferred choice for various applications.
Memory ICs like the R1RW0416DGE-2PR#B0 are known for their durability and high performance. These ICs feature advanced architectures that support large data capacities and fast access times. The R1RW0416DGE-2PR#B0 is no exception, offering reliable operation and low power consumption, which are critical for battery-powered devices.
The R1RW0416DGE-2PR#B0 is utilized in numerous fields, including consumer electronics, aerospace, and defense. For instance, it is commonly found in laptops and gaming consoles where speed and storage are essential. Additionally, it is used in aerospace systems where reliability and performance cannot be compromised. The R1RW0416DGE-2PR#B0 is a versatile and dependable Memory IC for diverse applications.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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