R6002ENDTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 1.7A CPT3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.23345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the R6002ENDTL by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The R6002ENDTL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRF3709STRLPBF
Infineon Technologies
IRFR9N20DTRL
NXP USA Inc.
PMZB150UNE315
Infineon Technologies
IRLR3714PBF
Micrel Inc.
MIC94030YM4
Infineon Technologies
IPD035N06L3GATMA1
Diodes Incorporated
ZVN3306FTC
NXP USA Inc.
PMV16XN215
Infineon Technologies
94-2110
IXYS