R6006KNXC7G
Rohm Semiconductor
Rohm Semiconductor
600V 6A TO-220FM, HIGH-SPEED SWI
$2.87
Available to order
Reference Price (USD)
1+
$2.87000
500+
$2.8413
1000+
$2.8126
1500+
$2.7839
2000+
$2.7552
2500+
$2.7265
Exquisite packaging
Discount
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The R6006KNXC7G from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R6006KNXC7G offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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