R6007JNJGTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 7A LPTS
$2.95
Available to order
Reference Price (USD)
1+
$2.95000
500+
$2.9205
1000+
$2.891
1500+
$2.8615
2000+
$2.832
2500+
$2.8025
Exquisite packaging
Discount
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The R6007JNJGTL from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R6007JNJGTL offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V
- Vgs(th) (Max) @ Id: 7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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