R6011END3TL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 11A TO252
$3.19
Available to order
Reference Price (USD)
1+
$3.19000
500+
$3.1581
1000+
$3.1262
1500+
$3.0943
2000+
$3.0624
2500+
$3.0305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6011END3TL1 from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R6011END3TL1 offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NCV8440ASTT3G
Toshiba Semiconductor and Storage
TK22A65X5,S5X
Diodes Incorporated
DMP2305U-7
Vishay Siliconix
SQJ174EP-T1_GE3
Infineon Technologies
IRLB8743PBF
Toshiba Semiconductor and Storage
TPN4R203NC,L1Q
Fairchild Semiconductor
HUF76129D3ST
Alpha & Omega Semiconductor Inc.
AOK160A60
Vishay Siliconix
SQS481ENW-T1_GE3
Diodes Incorporated