R6020KNZC8
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CHANNEL 600V 20A TO3PF
$0.00
Available to order
Reference Price (USD)
1+
$3.14000
30+
$2.66633
120+
$2.31075
510+
$1.96710
1,020+
$1.65900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6020KNZC8 by Rohm Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rohm Semiconductor for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
Related Products
Nexperia USA Inc.
BUK6215-75C,118-NEX
Fairchild Semiconductor
HUF76013D3S
onsemi
FQB5N20LTM
Infineon Technologies
IPD60R600P6
Infineon Technologies
BUZ73A H
Diodes Incorporated
ZVN4310ASTOB
Infineon Technologies
IPU10N03LA
onsemi
NTB30N06LT4G
onsemi
NVMFS5C456NLT3G
Infineon Technologies