Shopping cart

Subtotal: $0.00

R6024KNZ4C13

Rohm Semiconductor
R6024KNZ4C13 Preview
Rohm Semiconductor
MOSFET N-CH 600V 24A TO247
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3

Related Products

Toshiba Semiconductor and Storage

TPCA8103(TE12L,Q,M

Infineon Technologies

SIPC18N50C3X1SA1

Infineon Technologies

IPD060N03LGINCT

Microsemi Corporation

JANTXV2N6770T1

Harris Corporation

IRF822R

Harris Corporation

2N6895

Central Semiconductor Corp

CP372-CT

Top