R6035ENZ1C9
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 35A TO247
$0.00
Available to order
Reference Price (USD)
1+
$5.33000
10+
$4.78400
450+
$3.71851
900+
$3.33660
1,350+
$2.81400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the R6035ENZ1C9 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the R6035ENZ1C9 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
GeneSiC Semiconductor
GA50JT12-263
Alpha & Omega Semiconductor Inc.
AO4476AL
Infineon Technologies
BTS282ZE3230
Infineon Technologies
IRFR3911TRPBF
Vishay Siliconix
SI7102DN-T1-E3
Rohm Semiconductor
RSS090P03FU6TB
IXYS
IXTQ102N25T
Infineon Technologies
IRF6635
Fairchild Semiconductor
FQI4N25TU
NXP USA Inc.