R6511ENXC7G
Rohm Semiconductor
Rohm Semiconductor
650V 11A TO-220FM, LOW-NOISE POW
$3.45
Available to order
Reference Price (USD)
1+
$3.45000
500+
$3.4155
1000+
$3.381
1500+
$3.3465
2000+
$3.312
2500+
$3.2775
Exquisite packaging
Discount
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The R6511ENXC7G single MOSFET from Rohm Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the R6511ENXC7G is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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