R6520ENXC7G
Rohm Semiconductor
Rohm Semiconductor
650V 20A TO-220FM, LOW-NOISE POW
$5.59
Available to order
Reference Price (USD)
1+
$5.59000
500+
$5.5341
1000+
$5.4782
1500+
$5.4223
2000+
$5.3664
2500+
$5.3105
Exquisite packaging
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Enhance your electronic projects with the R6520ENXC7G single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's R6520ENXC7G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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