Shopping cart

Subtotal: $0.00

R6535KNX3C16

Rohm Semiconductor
R6535KNX3C16 Preview
Rohm Semiconductor
650V 35A, TO-220AB, HIGH-SPEED S
$7.19
Available to order
Reference Price (USD)
1+
$7.19000
500+
$7.1181
1000+
$7.0462
1500+
$6.9743
2000+
$6.9024
2500+
$6.8305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

Related Products

Vishay Siliconix

SIRA04DP-T1-GE3

Texas Instruments

CSD19505KTTT

Infineon Technologies

AUIRFR9024NTRL

Alpha & Omega Semiconductor Inc.

AOTF9N90

Alpha & Omega Semiconductor Inc.

AOWF20S60

Vishay Siliconix

IRF624PBF

Alpha & Omega Semiconductor Inc.

AO4425

Vishay Siliconix

SI1077X-T1-GE3

Infineon Technologies

IPW60R075CPFKSA1

Top