R6576KNZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 76A TO-247, HIGH-SPEED SWIT
$16.05
Available to order
Reference Price (USD)
1+
$16.05000
500+
$15.8895
1000+
$15.729
1500+
$15.5685
2000+
$15.408
2500+
$15.2475
Exquisite packaging
Discount
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The R6576KNZ4C13 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's R6576KNZ4C13 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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