R8002ANJGTL
Rohm Semiconductor
Rohm Semiconductor
NCH 800V 2A POWER MOSFET : R8002
$3.25
Available to order
Reference Price (USD)
1+
$3.25000
500+
$3.2175
1000+
$3.185
1500+
$3.1525
2000+
$3.12
2500+
$3.0875
Exquisite packaging
Discount
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Optimize your power electronics with the R8002ANJGTL single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the R8002ANJGTL combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263S
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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