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RBLQ3LAM10TFTR

Rohm Semiconductor
RBLQ3LAM10TFTR Preview
Rohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 3A,
$0.39
Available to order
Reference Price (USD)
1+
$0.39397
500+
$0.3900303
1000+
$0.3860906
1500+
$0.3821509
2000+
$0.3782112
2500+
$0.3742715
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 100 V
  • Capacitance @ Vr, F: 140pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 175°C

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