RCX220N25
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 250V 22A TO220FM
$2.36
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.67500
100+
$1.34620
500+
$1.10600
1,000+
$0.91640
2,500+
$0.88480
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RCX220N25 from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RCX220N25 offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Fairchild Semiconductor
FDI047AN08A0
STMicroelectronics
STD40NF03LT4
Harris Corporation
IRFD9113
STMicroelectronics
STD8NF25
Diotec Semiconductor
MMFTP84W
Infineon Technologies
IPB180N03S4LH0ATMA1
Diodes Incorporated
DMN61D8L-13
Infineon Technologies
BSC030N08NS5ATMA1
onsemi
NTMFS4H013NFT1G
onsemi