Shopping cart

Subtotal: $0.00

RD3T075CNTL1

Rohm Semiconductor
RD3T075CNTL1 Preview
Rohm Semiconductor
MOSFET N-CH 200V 7.5A TO252
$1.53
Available to order
Reference Price (USD)
2,500+
$0.51226
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Rohm Semiconductor

RCJ510N25TL

Vishay Siliconix

SISA10BDN-T1-GE3

Renesas Electronics America Inc

RJK03M7DPA-00#J5A

Toshiba Semiconductor and Storage

TK28V65W,LQ

Panjit International Inc.

PJA3415AE_R1_00001

Infineon Technologies

IRFSL7430PBF

Alpha & Omega Semiconductor Inc.

AOD4130

Renesas Electronics America Inc

2SJ387L-E

Top