RDR005N25TL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 250V 500MA TSMT3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.22040
6,000+
$0.21280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RDR005N25TL by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RDR005N25TL is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
Related Products
Vishay Siliconix
IRFP460LC
STMicroelectronics
STP80NE06-10
STMicroelectronics
STP30N20
Diotec Semiconductor
DI045N10PQ-AQ
STMicroelectronics
STP20NM50FP
Microsemi Corporation
2N6766
IXYS
IXFH42N20
Infineon Technologies
AUIRFZ44N
STMicroelectronics
STFI11NM65N
Infineon Technologies