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RE1C002ZPMGTL

Rohm Semiconductor
RE1C002ZPMGTL Preview
Rohm Semiconductor
MOSFET P-CH 20V 200MA EMT3F
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3F (SOT-416FL)
  • Package / Case: SC-89, SOT-490

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