RF1S30P06SM
Harris Corporation
Harris Corporation
P-CHANNEL POWER MOSFET
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RF1S30P06SM by Harris Corporation, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RF1S30P06SM is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPA60R125C6E8191XKSA1
Central Semiconductor Corp
CP406-CWDM3011N-CT
Microsemi Corporation
APT6040BN
Infineon Technologies
IPL65R340CFDAUMA2
Alpha & Omega Semiconductor Inc.
AOWF10T60
Renesas Electronics America Inc
2SJ208-AZ
Infineon Technologies
92-0262PBF
Infineon Technologies
BSC0303LSATMA1
Infineon Technologies
IRFP22N50APBFXKMA1
Renesas Electronics America Inc