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RF1S42N03L

Harris Corporation
RF1S42N03L Preview
Harris Corporation
42A, 30V, 0.025 OHMS, N-CHANNEL
$0.00
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 42A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK (TO-262)
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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