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RF4E070GNTR

Rohm Semiconductor
RF4E070GNTR Preview
Rohm Semiconductor
MOSFET N-CH 30V 7A HUML2020L8
$0.47
Available to order
Reference Price (USD)
3,000+
$0.14025
6,000+
$0.13175
15,000+
$0.12325
30,000+
$0.11900
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HUML2020L8
  • Package / Case: 8-PowerUDFN

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