RFD3055LESM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 60V 11A TO252AA
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Upgrade your designs with the RFD3055LESM by Fairchild Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RFD3055LESM is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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