RFD4N06L
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.28
Available to order
Reference Price (USD)
1+
$0.28000
500+
$0.2772
1000+
$0.2744
1500+
$0.2716
2000+
$0.2688
2500+
$0.266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RFD4N06L by Harris Corporation, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RFD4N06L is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Infineon Technologies
IRL40S212ARMA1
Harris Corporation
IRFP245
Infineon Technologies
IPA60R1K5CEXKSA1
STMicroelectronics
STU25N10F7
Diodes Incorporated
DMT35M4LFVW-7
Infineon Technologies
BSF134N10NJ3 G
Renesas Electronics America Inc
2SK1292(02)-S6-AZ
Vishay Siliconix
SIHA21N80AE-GE3
Diodes Incorporated
DMG4496SSSQ-13
Infineon Technologies