Shopping cart

Subtotal: $0.00

RFM12P08

Harris Corporation
RFM12P08 Preview
Harris Corporation
P-CHANNEL POWER MOSFET
$1.50
Available to order
Reference Price (USD)
1+
$1.50000
500+
$1.485
1000+
$1.47
1500+
$1.455
2000+
$1.44
2500+
$1.425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3
  • Package / Case: TO-204AA, TO-3

Related Products

Diodes Incorporated

DMN2310UFD-7

NXP USA Inc.

NX2020P1115

Diodes Incorporated

DMP3008SFG-13

Infineon Technologies

IPC30S2SN08NX2MA1

Diodes Incorporated

DMN10H170SFG-7

Infineon Technologies

IPN70R2K1CEATMA1

Renesas Electronics America Inc

RJK03D3DPA-00#J5A

Top