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RFM15N05L

Harris Corporation
RFM15N05L Preview
Harris Corporation
N-CHANNEL POWER MOSFET
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3
  • Package / Case: TO-204AA, TO-3

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