RFP18N08
Harris Corporation
Harris Corporation
N-CHANNEL, MOSFET
$1.02
Available to order
Reference Price (USD)
1+
$1.02000
500+
$1.0098
1000+
$0.9996
1500+
$0.9894
2000+
$0.9792
2500+
$0.969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the RFP18N08 by Harris Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RFP18N08 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Harris Corporation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
RJK1028DNS-00#J5
Diodes Incorporated
DMN2055UWQ-13
Renesas Electronics America Inc
2SK3326(9)AZ
Renesas Electronics America Inc
RJK03M9DNS-WS#J5
onsemi
NVMFS005N10MCLT1G
Renesas Electronics America Inc
2SK3322(1)-ZK-E2-AZ
Renesas Electronics America Inc
RJK0348DPA-01#J0
Harris Corporation
RFD15N06LESM
Diodes Incorporated
DMN6066SSSQ-13
onsemi