RFP2P10
Harris Corporation
Harris Corporation
P-CHANNEL POWER MOSFET
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RFP2P10 from Harris Corporation redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RFP2P10 offers the precision and reliability you need. Trust Harris Corporation to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Goford Semiconductor
G2012
Nexperia USA Inc.
PMPB07R0UNAX
Micro Commercial Co
SI3134KEA-TP
onsemi
NTPF450N80S3Z
Vishay Siliconix
SQJ858EP-T1_GE3
onsemi
NTMYS9D3N06CLTWG
Renesas Electronics America Inc
2SK1273(0)-T1-AZ
Torex Semiconductor Ltd
XP161A1265PR-G
Renesas Electronics America Inc
2SJ462-T1-AZ
Vishay Siliconix