RGT16NS65DGC9
Rohm Semiconductor
Rohm Semiconductor
IGBT
$2.79
Available to order
Reference Price (USD)
1+
$2.79000
500+
$2.7621
1000+
$2.7342
1500+
$2.7063
2000+
$2.6784
2500+
$2.6505
Exquisite packaging
Discount
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Enhance your electronic projects with the RGT16NS65DGC9 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGT16NS65DGC9 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGT16NS65DGC9 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 94 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 13ns/33ns
- Test Condition: 400V, 8A, 10Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
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