RGTVX6TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 80A FIELD STOP TRENCH IGBT
$7.10
Available to order
Reference Price (USD)
1+
$6.39000
10+
$5.73600
25+
$5.42240
100+
$4.69950
450+
$4.45851
900+
$4.00060
1,350+
$3.37400
Exquisite packaging
Discount
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The RGTVX6TS65GC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGTVX6TS65GC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 144 A
- Current - Collector Pulsed (Icm): 320 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
- Power - Max: 404 W
- Switching Energy: 2.65mJ (on), 1.8mJ (off)
- Input Type: Standard
- Gate Charge: 171 nC
- Td (on/off) @ 25°C: 45ns/201ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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