RGW80TK65EGVC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$7.69
Available to order
Reference Price (USD)
1+
$7.69000
500+
$7.6131
1000+
$7.5362
1500+
$7.4593
2000+
$7.3824
2500+
$7.3055
Exquisite packaging
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Upgrade your power management systems with the RGW80TK65EGVC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGW80TK65EGVC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGW80TK65EGVC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 39 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 81 W
- Switching Energy: 760µJ (on), 720µJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 44ns/143ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 102 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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