RHU003N03T106
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 300MA UMT3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.08800
6,000+
$0.07920
15,000+
$0.07040
30,000+
$0.06600
75,000+
$0.06160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RHU003N03T106 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RHU003N03T106 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
Related Products
Fairchild Semiconductor
NDS355AN-F169
Infineon Technologies
IRFR3103TRL
onsemi
FDB9403_SN00268
NXP USA Inc.
PHD96NQ03LT,118
onsemi
2N7002ET3G
Toshiba Semiconductor and Storage
SSM3J15CT(TPL3)
Infineon Technologies
AUIRFP2602
Infineon Technologies
IRF8308MTRPBF
Vishay Siliconix
IRL510L
Infineon Technologies