RJH60A81RDPD-A0#J2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 5A
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The RJH60A81RDPD-A0#J2 by Renesas Electronics America Inc is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RJH60A81RDPD-A0#J2 delivers robust performance. Renesas Electronics America Inc's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RJH60A81RDPD-A0#J2 into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
- Power - Max: 29.4 W
- Switching Energy: 130µJ (on), 60µJ (off)
- Input Type: Standard
- Gate Charge: 11 nC
- Td (on/off) @ 25°C: 30ns/40ns
- Test Condition: 300V, 5A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
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