RJH60D5BDPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 75A 200W TO-247
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$5.26000
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The RJH60D5BDPQ-E0#T2 from Renesas Electronics America Inc is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RJH60D5BDPQ-E0#T2 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
- Power - Max: 200 W
- Switching Energy: 400µJ (on), 810µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 50ns/130ns
- Test Condition: 300V, 37A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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