RJH60D7DPM-00#T1
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 90A 55W TO3PFM
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the RJH60D7DPM-00#T1 Single IGBT transistor by Renesas Electronics America Inc, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RJH60D7DPM-00#T1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RJH60D7DPM-00#T1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 55 W
- Switching Energy: 1.1mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 60ns/190ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM
Related Products
IXYS
IXGA12N120A2
Infineon Technologies
IRGS6B60KPBF
Infineon Technologies
IRGPF40F
Infineon Technologies
IGW30N60TP
STMicroelectronics
STGDL6NC60DIT4
IXYS
IXGR39N60BD1
STMicroelectronics
STGB20NC60V
onsemi
NGB8206NT4
Infineon Technologies
IRGPC50F
Infineon Technologies