RJH60V2BDPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 25A 63W LDPAK
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Discover the RJH60V2BDPE-00#J3 Single IGBT transistor by Renesas Electronics America Inc, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RJH60V2BDPE-00#J3 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RJH60V2BDPE-00#J3 for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 25 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 63 W
- Switching Energy: 30µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 33ns/65ns
- Test Condition: 300V, 12A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: LDPAK
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