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RJJ0315DPA-00#J5A

Renesas Electronics America Inc
RJJ0315DPA-00#J5A Preview
Renesas Electronics America Inc
MOSFET P-CH 30V 35A
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 8-WDFN Exposed Pad

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