RJK03E0DNS-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$0.87
Available to order
Reference Price (USD)
1+
$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
Exquisite packaging
Discount
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Enhance your electronic projects with the RJK03E0DNS-00#J5 single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's RJK03E0DNS-00#J5 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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