Shopping cart

Subtotal: $0.00

RJK03M8DNS-00#J5

Renesas Electronics America Inc
RJK03M8DNS-00#J5 Preview
Renesas Electronics America Inc
MOSFET N-CH 30V 30A 8HWSON
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN

Related Products

Infineon Technologies

IPP120N10S405AKSA1

Infineon Technologies

IPA60R190E6XKSA1

Vishay Siliconix

IRFP450LCPBF

Nexperia USA Inc.

BSP126,115

Panjit International Inc.

PJQ4441P-AU_R2_000A1

Infineon Technologies

IPT026N10N5ATMA1

Vishay Siliconix

SI7141DP-T1-GE3

Vishay Siliconix

SIHA25N60EFL-E3

Toshiba Semiconductor and Storage

TK10J80E,S1E

Top