RJK0601DPN-E0#T2
Renesas
Renesas
RJK0601DPN - N-CHANNEL MOSFET 60
$3.27
Available to order
Reference Price (USD)
1+
$3.26560
500+
$3.232944
1000+
$3.200288
1500+
$3.167632
2000+
$3.134976
2500+
$3.10232
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJK0601DPN-E0#T2 by Renesas is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RJK0601DPN-E0#T2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABS
- Package / Case: TO-220-3
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