RJK1001DPP-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 80A TO220FPA
$5.89
Available to order
Reference Price (USD)
1+
$5.89000
500+
$5.8311
1000+
$5.7722
1500+
$5.7133
2000+
$5.6544
2500+
$5.5955
Exquisite packaging
Discount
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Enhance your electronic projects with the RJK1001DPP-A0#T2 single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's RJK1001DPP-A0#T2 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 30W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABA
- Package / Case: TO-220-3
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