RJK5012DPP-MG#T2
Renesas
Renesas
RJK5012DPP - N CHANNEL MOSFET
$2.13
Available to order
Reference Price (USD)
1+
$2.13200
500+
$2.11068
1000+
$2.08936
1500+
$2.06804
2000+
$2.04672
2500+
$2.0254
Exquisite packaging
Discount
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Meet the RJK5012DPP-MG#T2 by Renesas, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RJK5012DPP-MG#T2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FN
- Package / Case: TO-220-3 Full Pack
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