RJK5015DPK-00#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CHANNEL 500V 25A TO3P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RJK5015DPK-00#T0 single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RJK5015DPK-00#T0 combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Fairchild Semiconductor
IRFS740B
Microchip Technology
MIC94031CYW
Alpha & Omega Semiconductor Inc.
AON6104FD
Harris Corporation
IRF9633
onsemi
ZSPM9000AI1R
Infineon Technologies
IPN65R1K5CE
Infineon Technologies
62-0162PBF
Infineon Technologies
IPC65SR110CFDAX2MA1
Harris Corporation
RLD03N06CLE
Infineon Technologies