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RJK5030DPD-00#J2

Renesas Electronics America Inc
RJK5030DPD-00#J2 Preview
Renesas Electronics America Inc
MOSFET N-CH 500V 5A MP3A
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 41.7W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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