RJK6024DPD-00#J2
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$1.30
Available to order
Reference Price (USD)
1+
$1.30000
500+
$1.287
1000+
$1.274
1500+
$1.261
2000+
$1.248
2500+
$1.235
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJK6024DPD-00#J2 by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RJK6024DPD-00#J2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 42Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 27.2W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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